| PART |
Description |
Maker |
| AN856 |
TRIPLE GALVANIC INSULATED HIGH SIDE DRIVING WITH TD310
|
SGS Thomson Microelectronics
|
| BAS16S Q62702-A1241 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)
|
SIEMENS[Siemens Semiconductor Group]
|
| HCS11MS FN3048 |
Radiation Hardened Triple 3-Input AND Gate(抗辐射三3输入与门) HC/UH SERIES, TRIPLE 3-INPUT AND GATE, UUC14
From old datasheet system
AND-Gate, 3-Input, Triple, Rad-Hard, High-Speed, CMOS, Logic
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM400DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DY-66S RM600DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DB-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| BTA416Y-600B BTA416Y-600C BTA416Y-800B BTA416Y-800 |
16 A three-quadrant triacs insulated, high commutation, high temperature
|
NXP Semiconductors
|
| RM400DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE
|
POWEREX[Powerex Power Semiconductors]
|
| BM6105FW-LBZ |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
ROHM
|
| KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings
KEC(Korea Electronics)
|
